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| PD - 95298 IRF7322D1PBF FETKYa MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A A S G 1 2 3 4 8 7 6 K K D D VDSS = -20V RDS(on) = 0.058 Schottky Vf = 0.39V 5 Top View Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current A Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range Maximum -5.3 -4.3 -43 2.0 1.3 16 12 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient A Maximum 62.5 Units C/W Notes: A Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) A ISD -2.9A, di/dt -77A/s, VDD V(BR)DSS, TJ 150C A Pulse width 300s; duty cycle 2% A Surface mounted on FR-4 board, t 10sec. www.irf.com 1 10/12/04 IRF7322D1PBF MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 -- -- -0.70 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- 0.049 0.082 -- 5.9 -- -- -- -- 19 4.0 7.7 15 40 42 49 780 470 240 Max. Units Conditions -- V VGS = 0V, ID = -250A 0.062 VGS = -4.5V, ID = -2.9A 0.098 VGS = -2.7V, ID = -1.5A -- V VDS = VGS, ID = -250A -- S VDS = -10V, ID = -1.5A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 55C 100 VGS = -12.0V nA -100 VGS = 12.0V 29 ID = -2.9A 6.1 nC VDS = -16V 12 VGS = -4.5V (see figure 6) A 22 VDD = -10V 60 ID = -2.9A ns 63 RG = 6.0 73 RD = 3.4 A -- VGS = 0V -- pF VDS = -15V -- = 1.0MHz (see figure 5) Conditions 2 MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge Min. Typ. Max. Units -- -- -2.5 A -- -- -21 -- -- -1.2 V -- 47 71 ns -- 49 73 nC TJ = 25C, IS = -2.9A, VGS = 0V TJ = 25C, IF = -2.9A di/dt = 100A/s A Schottky Diode Maximum Ratings IF(av) ISM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 2.7 A 2 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C See Fig. 14 TA = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.02 mA 8 92 pF 3600 V/ s Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 20V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge 2 www.irf.com 2 Power Mosfet Characteristics 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP IRF7322D1PBF 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 10 1 -1.50V 1 -1.50V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 I D = -2.9A -I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.5 V DS = -10V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = -4.5V 100 120 140 160 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7322D1PBF Power Mosfet Characteristics 1400 1200 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 10 I D = -2.9A VDS = -16V 8 C, Capacitance (pF) 1000 Ciss Coss 800 6 600 4 400 Crss 2 200 0 1 10 100 A 0 0 5 10 15 20 25 30 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I TJ = 150 C 100us TJ = 25 C 1 10 1ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7322D1PBF Power Mosfet Characteristics 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.8 0.08 RDS (on) , Drain-to-Source On Resistance () RDS (on) , Drain-to-Source On Resistance () 0.07 0.6 V GS = -2.7V 0.06 0.4 0.05 I D = -5.3A 0.2 0.04 VGS = -4.5V 0.0 0 4 8 12 16 20 A 0.03 0.0 2.0 4.0 6.0 8.0 A -I D , Drain Current (A) V GS , Gate-to-Source Voltage (V) Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7322D1PBF Schottky Diode Characteristics 10 100 10 TJ = 150C 125C 100C 75C 50C 25C Reverse Current - IR (mA) 1 0.1 0.01 0.001 0.0001 Instantaneous Forward Current - IF (A) ) 0 4 8 12 16 20 1 TJ = 150C TJ = 125C TJ = 25C 160 140 120 100 80 60 40 20 0 0.0 Reverse Voltage - V R (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage Allowable Ambient Temperature - (C) V r = 20V R thJA = 62.5C/W Square wave 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V FM (V) Forward Voltage Drop - VF (V) D = 3/4 D = 1/2 D =1/3 D = 1/4 D = 1/5 DC A 0.5 1.0 1.5 2.0 2.5 3.0 Fig. 12 - Typical Forward Voltage Drop Characteristics Average Forward Current - I F(AV) (A) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7322D1PBF SO-8 (Fetky) Package Outline D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIME TER 3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCE ED 0.15 [.006]. 6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCE ED 0.25 [.010]. 7 DIMENS ION IS THE LE NGTH OF LEAD FOR S OLDERING TO A S UBS TRATE. 3X 1.27 [.050] 6.46 [.255] FOOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INTERNAT IONAL RECT IFIER LOGO XXXX 807D1 www.irf.com 7 IRF7322D1PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com |
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